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Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp. Customer Support Dept. April 1, 2003
Cautions
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HAT2031T
Silicon N Channel Power MOS FET High Speed Power Switching
ADE-208-529F (Z) 7th. Edition Feb. 2001 Features
* * * * Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting
Outline
TSSOP-8
65 34
87
1 D
8 D
12
4 G
5 G
SS 23
SS 67
MOS1
MOS2
1, 8 Drain 2, 3, 6, 7 Source 4, 5 Gate
HAT2031T
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Pch Tch Tstg
Note2 NoteCR Note1
Ratings 20 12 3.5 28 3.5 1 1.5 150 - 55 to + 150
Unit V V A A A W W C C
1. PW 10s, duty cycle 1 % 2. 1 Drive Operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 3. 2 Drive Operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
Electrical Characteristics (Ta = 25C)
Item Symbol Min 20 12 -- -- 0.5 -- -- 4.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.054 0.074 7 300 185 90 13 75 60 75 0.85 35 Max -- -- 10 1 1.5 0.070 0.098 -- -- -- -- -- -- -- -- 1.11 -- Unit V V A A V S pF pF pF ns ns ns ns V ns IF = 3.5 A, VGS = 0 Note4 IF = 3.5 A, VGS = 0 diF/ dt = 20 A/s Test Conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 10 V, VDS = 0 VDS = 12 V, VGS = 0 VDS = 10 V, I D = 1m A I D = 2 A, VGS = 4 V Note4 I D = 2 A, VGS = 2.5 V Note4 I D = 2 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1MHz VGS = 4 V, ID = 2 A VDD 10 V Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr
HAT2031T
Main Characteristics
Power vs. Temperature Derating 2.0
Pch (W)
100
I D (A)
Maximum Safe Operation Area
10 s 100 s
DC
Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s
30 10 3 1 0.3
Op
1.5
PW
er at ion (P
1
m
Channel Dissipation
Drain Current
=
s
1.0
1 Dr ive
10
2
m
0.5
Op
ive Dr Op er at ion
s
W
er
at
ion
0
50 100 150 200 Ambient Temperature Ta (C)
05 Operation in s) 0.1 this area is limited by R DS(on) 0.03 Ta = 25 C 0.01 1 shot Pulse 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V)
< Note 1
Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm)
Typical Output Characteristics 20 10V 5V 4V 20 3V Pulse Test 2.5 V
I D (A)
Typical Transfer Characteristics
I D (A)
16
16
-25C 25C Tc = 75C
12
12
Drain Current
8 2.0 V 4 VGS = 1.5 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V)
Drain Current
8
4 V DS = 10 V Pulse Test 0 1 2 3 Gate to Source Voltage 5 4 V GS (V)
HAT2031T
Drain to Source Saturation Voltage vs. Gate to Source Voltage
V DS(on) (V)
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source On State Resistance R DS(on) ( )
0.2
0.2
Pulse Test
Pulse Test
0.1 0.05
0.16
2.5 V VGS = 4 V
Drain to Source Voltage
0.12 ID=2A 0.08 1A 0.04 0.5 A
0.02 0.01
0.005
0.002
0
2 4 6 Gate to Source Voltage
8 V GS (V)
10
0.2
0.5 1 2 Drain Current
5 10 I D (A)
20
Static Drain to Source on State Resistance R DS(on) ( )
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance vs. Temperature 0.2
Forward Transfer Admittance vs. Drain Current 50
0.16 I D = 2, 1, 0.5 A VGS = 2.5 V 0.08 2, 1, 0.5 A 0.04 0 -40 4V Pulse Test 0 40 80 120 160 Case Temperature Tc (C)
20 10 5
Tc = -25 C
0.12
75 C 25 C 2 1 0.5 0.2 V DS = 10 V Pulse Test 0.5 1 2 5 10 Drain Current I D (A) 20
HAT2031T
Body-Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) 200 100 50 10000 3000 1000 300 100 30 10 10 0 10 20 30 40 50 Drain to Source Voltage V DS (V) DS Crss Ciss Coss VGS = 0 f = 1 MHz Typical Capacitance vs. Drain to Source Voltage
20 10 5 0.1 di/dt = 20 A/s V GS = 0, Ta = 25C 0.2 0.5 1 2 Reverse Drain Current 5 I DR (A)
Capacitance C (pF)
Dynamic Input Characteristics V GS (V) 50 V DS (V) I D = 3.5 A 40 V DD = 5 V 10 V 20 V V GS 20 V DS 4 8 10 1000 500 200 100 50 tf
Switching Characteristics V GS = 4 V, V DD = 10 V PW = 5 s, duty < 1 %
Drain to Source Voltage
30
6
Gate to Source Voltage
Switching Time t (ns)
tr 20 10 0.1 t d(on) 0.2 0.5 1 Drain Current
t d(off)
10
V DD = 20 V 10 V 5V 2 4 6 8 Gate Charge Qg (nc)
2 0 10
0
2 5 I D (A)
10
HAT2031T
Reverse Drain Current vs. Souece to Drain Voltage 20 Pulse Test Reverse Drain Current I DR (A) 16
12
8
5V
V GS = 0 V
4
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
V SD (V)
Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 4V 50 V DD = 10 V Vout Monitor
Switching Time Waveform 90% 10% 10% 90% td(on) tr 90% td(off) tf 10%
Vout
HAT2031T
Normalized Transient Thermal Impedance vs. Pulse Width ( 1 Drive Operation) 10 Normalized Transient Thermal Impedance s (t)
1
D=1 0.5
0.1
0.2
0.1 0.05
0.02 0.01
p ot sh 1 uls e
0.01
ch - f(t) = s (t) * ch - f ch - f = 166 C/W, Ta = 25 C When using the glass epoxy board (FR4 40x40x1.6 mm)
PDM PW T
0.001
D=
PW T
0.0001 10
100
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width ( 2 Drive Operation) 10 Normalized Transient Thermal Impedance s (t)
1
D=1 0.5
0.1
0.2
0.1
0.05
0.01
0.02 0.01
ch - f(t) = s (t) * ch - f ch - f = 210 C/W, Ta = 25 C When using the glass epoxy board (FR4 40x40x1.6 mm)
ls pu e
PDM PW T
0.001
t ho 1s
D=
PW T
0.0001 10
100
1m
10 m
100 m 1 10 Pulse Width PW (S)
100
1000
10000
HAT2031T
HAT2031T
Package Dimensions As of January, 2001
Unit: mm
3.00 3.30 Max 8 5 4.40 1 *0.22 +0.08 -0.07 4 0.65 1.0 0.13 M 0.805 Max *0.17 0.05 0.15 0.04 1.10 Max 6.40 0.20 0 - 8 0.50 0.10 0.20 0.06
0.10
0.07 +0.03 -0.04
*Dimension including the plating thickness Base material dimension
Hitachi Code JEDEC EIAJ Mass (reference value)
TTP-8D -- -- --
HAT2031T
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright (c) Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0

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